Paper Title:
Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1263-1266
DOI
10.4028/www.scientific.net/MSF.338-342.1263
Citation
R. Jonsson, Q. Wahab, S. Rudner, "Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors", Materials Science Forum, Vols. 338-342, pp. 1263-1266, 2000
Online since
May 2000
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Price
$32.00
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