Paper Title:
High Temperature, High Current, 4H-SiC Accu-DMOSFET
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1271-1274
DOI
10.4028/www.scientific.net/MSF.338-342.1271
Citation
R. Singh, S. H. Ryu, J. W. Palmour, "High Temperature, High Current, 4H-SiC Accu-DMOSFET", Materials Science Forum, Vols. 338-342, pp. 1271-1274, 2000
Online since
May 2000
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Price
$32.00
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