Paper Title:
4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1275-1278
DOI
10.4028/www.scientific.net/MSF.338-342.1275
Citation
A.V. Suvorov, L. A. Lipkin, G.M. Johnson, R. Singh, J. W. Palmour, "4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs", Materials Science Forum, Vols. 338-342, pp. 1275-1278, 2000
Online since
May 2000
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Price
$32.00
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