Paper Title:
Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1279-1282
DOI
10.4028/www.scientific.net/MSF.338-342.1279
Citation
K. Chatty, S. Banerjee, T. P. Chow, R. J. Gutmann, "Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 1279-1282, 2000
Online since
May 2000
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