Paper Title:
Accumulation-Mode SiC Power MOSFET Design Issues
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1287-1290
DOI
10.4028/www.scientific.net/MSF.338-342.1287
Citation
Y. Wang, C. Weitzel, M. Bhatnagar, "Accumulation-Mode SiC Power MOSFET Design Issues", Materials Science Forum, Vols. 338-342, pp. 1287-1290, 2000
Online since
May 2000
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Price
$32.00
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