Paper Title:
Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1295-1298
DOI
10.4028/www.scientific.net/MSF.338-342.1295
Citation
R. Schörner, P. Friedrichs, D. Peters, H. Mitlehner, B. Weis, D. Stephani, "Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V", Materials Science Forum, Vols. 338-342, pp. 1295-1298, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.