Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1299-1302 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1299 |
| Citation |
Takeshi Ohshima et al., 2000, Materials Science Forum, 338-342, 1299 |
| Authors |
Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama |
| Keywords |
Channel Mobility, Field-Effect Transistor, Metal-Oxide-Semiconductor, Post-Oxidation Annealing, Threshold Voltage |
| Full Paper |
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