Paper Title:
Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1299-1302
DOI
10.4028/www.scientific.net/MSF.338-342.1299
Citation
T. Ohshima, M. Yoshikawa, H. Itoh, K. Kojima, S. Okada, I. Nashiyama, "Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1299-1302, 2000
Online since
May 2000
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Price
$32.00
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