Progress in SiC Bulk Growth |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
13-16 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.13 |
| Citation |
Mikhail Anikin et al., 2000, Materials Science Forum, 338-342, 13 |
| Authors |
Mikhail Anikin, O. Chaix-Pluchery, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Philippe Grosse, Christian Faure, Y. Grange, Gérard Basset, Cécile Moulin, Roland Madar |
| Keywords |
4H and 6H-SiC sublimation growth, Crystal Shape, Defect, In Situ Etching |
| Full Paper |
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