Paper Title:
Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1303-1306
DOI
10.4028/www.scientific.net/MSF.338-342.1303
Citation
P. Godignon, X. Jordá, M. Vellvehi, S. Berberich, J. Montserrat, L. Ottaviani, "Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties", Materials Science Forum, Vols. 338-342, pp. 1303-1306, 2000
Online since
May 2000
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Price
$32.00
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