Paper Title:
Investigation of Lateral RESURF, 6H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1307-1310
DOI
10.4028/www.scientific.net/MSF.338-342.1307
Citation
A. K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde, P.A. Sanger, "Investigation of Lateral RESURF, 6H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1307-1310, 2000
Online since
May 2000
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Price
$32.00
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