Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
131-136 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.131 |
| Citation |
Alexsandre Ellison et al., 2000, Materials Science Forum, 338-342, 131 |
| Authors |
Alexsandre Ellison, Jie Zhang, W. Magnusson, Anne Henry, Qamar-ul Wahab, J. Peber Bergman, Carl G. Hemmingsson, Nguyen Tien Son, Erik Janzén |
| Keywords |
Chemical Vapor Deposition (CVD), Chimney, Defect Density, Growth Process, High Resistivity, HTCVD, Purity, Vertical Hot-Wall Reactor |
| Full Paper |
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