Paper Title:
Highly Durable SiC nMISFET's at 450°C
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1311-1314
DOI
10.4028/www.scientific.net/MSF.338-342.1311
Citation
W.J. Zhu, X. W. Wang, T.P. Ma, J. B. Tucker, M. V. Rao, "Highly Durable SiC nMISFET's at 450°C", Materials Science Forum, Vols. 338-342, pp. 1311-1314, 2000
Online since
May 2000
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Price
$32.00
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