Paper Title:
SiC MISFETs with MBE-grown AlN Gate Dielectric
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1315-1318
DOI
10.4028/www.scientific.net/MSF.338-342.1315
Citation
C. M. Zetterling, M. Östling, H. Yano, T. Kimoto, H. Matsunami, K. J. Linthicum, R. F. Davis, "SiC MISFETs with MBE-grown AlN Gate Dielectric", Materials Science Forum, Vols. 338-342, pp. 1315-1318, 2000
Online since
May 2000
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Price
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