Paper Title:
Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1319-1322
DOI
10.4028/www.scientific.net/MSF.338-342.1319
Citation
N.V. Dyakonova, P. A. Ivanov, V.A. Kozlov, M. E. Levinshtein, J. W. Palmour, S. L. Rumyantsev, R. Singh, "Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities", Materials Science Forum, Vols. 338-342, pp. 1319-1322, 2000
Online since
May 2000
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