Paper Title:
Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1327-1330
DOI
10.4028/www.scientific.net/MSF.338-342.1327
Citation
M. Domeij, B. Breitholtz, P. Liberski, A. Martinez, P. Bergman, "Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes", Materials Science Forum, Vols. 338-342, pp. 1327-1330, 2000
Online since
May 2000
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Price
$32.00
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