Paper Title:
Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1331-1334
DOI
10.4028/www.scientific.net/MSF.338-342.1331
Citation
K. Chatty, V. Khemka, T. P. Chow, R. J. Gutmann, "Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers", Materials Science Forum, Vols. 338-342, pp. 1331-1334, 2000
Online since
May 2000
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Price
$32.00
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