Paper Title:
Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1339-1342
DOI
10.4028/www.scientific.net/MSF.338-342.1339
Citation
D. C. Sheridan, G. Niu, J. N. Merrett, J.D. Cressler, C. Ellis, C. C. Tin, R.R. Siergiej, "Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination", Materials Science Forum, Vols. 338-342, pp. 1339-1342, 2000
Online since
May 2000
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Price
$32.00
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