Paper Title:
Transient Characterization of SiC P-N Diode
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1343-1346
DOI
10.4028/www.scientific.net/MSF.338-342.1343
Citation
N. Keskar, K. Shenai, P. G. Neudeck, "Transient Characterization of SiC P-N Diode", Materials Science Forum, Vols. 338-342, pp. 1343-1346, 2000
Online since
May 2000
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Price
$32.00
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