Paper Title:
Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1347-1350
DOI
10.4028/www.scientific.net/MSF.338-342.1347
Citation
N. Miyamoto, A. Saitoh, T. Kimoto, H. Matsunami, Y. Hishida, M. Watanabe, "Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics", Materials Science Forum, Vols. 338-342, pp. 1347-1350, 2000
Online since
May 2000
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Price
$32.00
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