Paper Title:
Defect Modeling and Simulation of 4-H SiC P-N Diode
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1351-1354
DOI
10.4028/www.scientific.net/MSF.338-342.1351
Citation
N. Keskar, K. Shenai, P. G. Neudeck, "Defect Modeling and Simulation of 4-H SiC P-N Diode", Materials Science Forum, Vols. 338-342, pp. 1351-1354, 2000
Online since
May 2000
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Price
$32.00
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