Paper Title:
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
137-140
DOI
10.4028/www.scientific.net/MSF.338-342.137
Citation
J. Zhang, A. Ellison, E. Janzén, "Morphology Control for Growth of Thick Epitaxial 4H SiC Layers", Materials Science Forum, Vols. 338-342, pp. 137-140, 2000
Online since
May 2000
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Price
$32.00
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