Paper Title:
Monte Carlo Simulation of 4H-SiC IMPATT Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1379-1382
DOI
10.4028/www.scientific.net/MSF.338-342.1379
Citation
V. Gružinskis, Y. B. Luo, J. H. Zhao, M. Weiner, M. Pan, P. Shiktorov, E. Starikov, "Monte Carlo Simulation of 4H-SiC IMPATT Diodes", Materials Science Forum, Vols. 338-342, pp. 1379-1382, 2000
Online since
May 2000
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Price
$32.00
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