Paper Title:
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1387-1390
DOI
10.4028/www.scientific.net/MSF.338-342.1387
Citation
A. K. Agarwal, S. H. Ryu, R. Singh, O. Kordina, J. W. Palmour, "2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development", Materials Science Forum, Vols. 338-342, pp. 1387-1390, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.