Paper Title:
4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1395-1398
DOI
10.4028/www.scientific.net/MSF.338-342.1395
Citation
P. B. Shah, B. Geil, K. A. Jones, T.E. Griffin, M. A. Derenge, "4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control", Materials Science Forum, Vols. 338-342, pp. 1395-1398, 2000
Online since
May 2000
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Price
$32.00
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