Paper Title:
Vertical Hot-Wall Type CVD for SiC Growth
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
141-144
DOI
10.4028/www.scientific.net/MSF.338-342.141
Citation
K. Takahashi, M. Uchida, M. Kitabatake, T. Uenoyama, "Vertical Hot-Wall Type CVD for SiC Growth", Materials Science Forum, Vols. 338-342, pp. 141-144, 2000
Online since
May 2000
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Price
$32.00
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