Vertical Hot-Wall Type CVD for SiC Growth |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
141-144 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.141 |
| Citation |
Kunimasa Takahashi et al., 2000, Materials Science Forum, 338-342, 141 |
| Authors |
Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Takeshi Uenoyama |
| Keywords |
Epitaxial Growth, Pulse Doping, Pulse Valve, Vertical Hot-Wall Type CVD |
| Full Paper |
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