Paper Title:
Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1411-1414
DOI
10.4028/www.scientific.net/MSF.338-342.1411
Citation
J. Wang, B.W. Williams, S. E. Madathil, M.M. Desouza, "Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs", Materials Science Forum, Vols. 338-342, pp. 1411-1414, 2000
Online since
May 2000
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Price
$32.00
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