Paper Title:
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1415-1418
DOI
10.4028/www.scientific.net/MSF.338-342.1415
Citation
Y. Tang, N. Ramungul, T. P. Chow, "Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 1415-1418, 2000
Online since
May 2000
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Price
$32.00
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