Paper Title:
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1419-1422
DOI
10.4028/www.scientific.net/MSF.338-342.1419
Citation
K. Adachi, C. M. Johnson, S. Ortolland, N. G. Wright, A. G. O'Neill, "TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors", Materials Science Forum, Vols. 338-342, pp. 1419-1422, 2000
Online since
May 2000
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Price
$32.00
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