High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1427-1430 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1427 |
| Citation |
Sei Hyung Ryu et al., 2000, Materials Science Forum, 338-342, 1427 |
| Authors |
Sei Hyung Ryu, Ranbir Singh, John W. Palmour |
| Keywords |
High Power, High Temperature, Insulated Gate Bipolar Transistor, P-Channel |
| Full Paper |
Get the full paper by clicking here
|
