Paper Title:
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1427-1430
DOI
10.4028/www.scientific.net/MSF.338-342.1427
Citation
S. H. Ryu, R. Singh, J. W. Palmour, "High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation", Materials Science Forum, Vols. 338-342, pp. 1427-1430, 2000
Online since
May 2000
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