Paper Title:
High Temperature 4H-SiC FET for Gas Sensing Applications
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1431-1434
DOI
10.4028/www.scientific.net/MSF.338-342.1431
Citation
S. Savage, A. O. Konstantinov, A.M. Saroukhan, C. I. Harris, "High Temperature 4H-SiC FET for Gas Sensing Applications", Materials Science Forum, Vols. 338-342, pp. 1431-1434, 2000
Online since
May 2000
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Price
$32.00
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