Paper Title:
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
145-148
DOI
10.4028/www.scientific.net/MSF.338-342.145
Citation
H. Tsuchida, I. Kamata, T. Jikimoto, K. Izumi, "LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 338-342, pp. 145-148, 2000
Online since
May 2000
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Price
$32.00
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