LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
145-148 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.145 |
| Citation |
Hidekazu Tsuchida et al., 2000, Materials Science Forum, 338-342, 145 |
| Authors |
Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi |
| Keywords |
Crystal Bending, LPCVD, Rocking Curve, Schottky Diode, Thick Layers |
| Full Paper |
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