Paper Title:
Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1463-1466
DOI
10.4028/www.scientific.net/MSF.338-342.1463
Citation
H.M. Liaw, R. Venugopal, J. Wan, R. Doyle, P. Fejes, M. J. Loboda, M.R. Melloch, "Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon", Materials Science Forum, Vols. 338-342, pp. 1463-1466, 2000
Online since
May 2000
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Price
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