3C-SiC Pseudosubstrates for the Growth of Cubic GaN |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1467-1470 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1467 |
| Citation |
P. Dupel et al., 2000, Materials Science Forum, 338-342, 1467 |
| Authors |
P. Dupel, Thierry Chassagne, Didier Chaussende, Yves Monteil, François Cauwet, Etienne Bustarret, A. Deneuville, G. Bentoumi, Eugénie Martinez, B. Daudin, G. Feuillet |
| Keywords |
Atomic Force Microscope (AFM), FTIR, RAMAN, RHEED, SOI |
| Full Paper |
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