Paper Title:
3C-SiC Pseudosubstrates for the Growth of Cubic GaN
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1467-1470
DOI
10.4028/www.scientific.net/MSF.338-342.1467
Citation
P. Dupel, T. Chassagne, D. Chaussende, Y. Monteil, F. Cauwet, E. Bustarret, A. Deneuville, G. Bentoumi, E. Martinez, B. Daudin, G. Feuillet, "3C-SiC Pseudosubstrates for the Growth of Cubic GaN", Materials Science Forum, Vols. 338-342, pp. 1467-1470, 2000
Online since
May 2000
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Price
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