Paper Title:
Pendeoepitaxy of GaN and InGaN LEDs on SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1477-1482
DOI
10.4028/www.scientific.net/MSF.338-342.1477
Citation
H.S. Kong, J. Edmond, K. Doverspike, D. Emerson, G. Bulman, K. Haberern, H. Dieringer, D. Slater, "Pendeoepitaxy of GaN and InGaN LEDs on SiC", Materials Science Forum, Vols. 338-342, pp. 1477-1482, 2000
Online since
May 2000
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Price
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