Paper Title:
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1483-1486
DOI
10.4028/www.scientific.net/MSF.338-342.1483
Citation
F. Bertram, T. Riemann, D. Rudloff, J. Christen, A. Kaschner, A. Hoffmann, K. Hiramatsu, "Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy", Materials Science Forum, Vols. 338-342, pp. 1483-1486, 2000
Online since
May 2000
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Price
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