High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1487-1490 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1487 |
| Citation |
H. Lahrèche et al., 2000, Materials Science Forum, 338-342, 1487 |
| Authors |
H. Lahrèche, V. Bousquet, M. Laügt, Olivier Tottereau, P. Vennéguès, B. Beaumont, Pierre Gibart |
| Keywords |
Atomic Force Microscope (AFM), MOVPE, Photoluminescence (PL), TEM |
| Full Paper |
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