Paper Title:
High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1487-1490
DOI
10.4028/www.scientific.net/MSF.338-342.1487
Citation
H. Lahrèche, V. Bousquet, M. Laügt, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart, "High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO", Materials Science Forum, Vols. 338-342, pp. 1487-1490, 2000
Online since
May 2000
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Price
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