3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
149-152 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.149 |
| Citation |
Wei Ji et al., 2000, Materials Science Forum, 338-342, 149 |
| Authors |
Wei Ji, Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu |
| Keywords |
Chemical Vapor Deposition (CVD), Epitaxial Growth, Hot-Wall CVD, Numerical Simulation |
| Full Paper |
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