Paper Title:
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
149-152
DOI
10.4028/www.scientific.net/MSF.338-342.149
Citation
W. Ji, P. M. Lofgren, C. Hallin, C.-Y. Gu, "3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor", Materials Science Forum, Vols. 338-342, pp. 149-152, 2000
Online since
May 2000
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Price
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