Paper Title:
Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1491-1494
DOI
10.4028/www.scientific.net/MSF.338-342.1491
Citation
T. Gehrke, K. J. Linthicum, P. Rajagopal, E. A. Preble, E.P. Carlson, B. M. Robin, R. F. Davis, "Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 338-342, pp. 1491-1494, 2000
Online since
May 2000
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