Paper Title:
Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1495-1498
DOI
10.4028/www.scientific.net/MSF.338-342.1495
Citation
T. Kachi, K. Itoh, K. Tomita, H. Tadano, "Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy", Materials Science Forum, Vols. 338-342, pp. 1495-1498, 2000
Online since
May 2000
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Price
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