Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1515-1518 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1515 |
| Citation |
D.D. Avrov et al., 2000, Materials Science Forum, 338-342, 1515 |
| Authors |
D.D. Avrov, Sergey I. Dorozhkin, Andrew O. Lebedev, V.P. Rastegaev, Yuri M. Tairov |
| Keywords |
Chloride-Transport Process, Defect Formation, Nitrided Stainless Steel, Sublimation Growth |
| Full Paper |
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