Paper Title:
Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1515-1518
DOI
10.4028/www.scientific.net/MSF.338-342.1515
Citation
D.D. Avrov, S. I. Dorozhkin, A. O. Lebedev, V.P. Rastegaev, Y. M. Tairov, "Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process", Materials Science Forum, Vols. 338-342, pp. 1515-1518, 2000
Online since
May 2000
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