3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
153-156 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.153 |
| Citation |
Peter M. Lofgren et al., 2000, Materials Science Forum, 338-342, 153 |
| Authors |
Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu, Wei Ji |
| Keywords |
Chemical Vapor Deposition (CVD), Epitaxial Growth, Hot-Wall CVD, Numerical Simulation |
| Full Paper |
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