Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1561-1566 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1561 |
| Citation |
Chris G. Van de Walle, 2000, Materials Science Forum, 338-342, 1561 |
| Authors |
Chris G. Van de Walle |
| Keywords |
Doping, First-Principles Calculations, Impurity, Oxygen, Vacancy |
| Full Paper |
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