Paper Title:
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
157-160
DOI
10.4028/www.scientific.net/MSF.338-342.157
Citation
E. Eshun, C. Taylor, N.F. Diagne, M. G. Spencer, I. T. Ferguson, A. Gurary, R. Stall, "The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor", Materials Science Forum, Vols. 338-342, pp. 157-160, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.