The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
157-160 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.157 |
| Citation |
Ebenezer Eshun et al., 2000, Materials Science Forum, 338-342, 157 |
| Authors |
Ebenezer Eshun, Crawford Taylor, N.Fama Diagne, Michael G. Spencer, Ian T. Ferguson, Alex Gurary, Rick Stall |
| Keywords |
Background Doping, Chemical Vapor Deposition (CVD), Filament Lifetime, Homoepitaxial Growth, Resistive Heating |
| Full Paper |
Get the full paper by clicking here
|
