Paper Title:

Low Frequency Noise in n-GaN with High Electron Mobility

Periodical Materials Science Forum (Volumes 338 - 342)
Main Theme Silicon Carbide and Related Materials - 1999
Edited by Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages 1603-1608
DOI 10.4028/www.scientific.net/MSF.338-342.1603
Citation Sergey L. Rumyantsev et al., 2000, Materials Science Forum, 338-342, 1603
Authors Sergey L. Rumyantsev, David C. Look, Michael E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, J. Molnar, Michael S. Shur
Keywords 1/f Noise, Band-to-Band, Low-Frequency Noise, Sapphire Substrate
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