Paper Title:
Low Frequency Noise in n-GaN with High Electron Mobility
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1603-1608
DOI
10.4028/www.scientific.net/MSF.338-342.1603
Citation
S. L. Rumyantsev, D. C. Look, M. E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, J. Molnar, M. S. Shur, "Low Frequency Noise in n-GaN with High Electron Mobility", Materials Science Forum, Vols. 338-342, pp. 1603-1608, 2000
Online since
May 2000
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Price
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