Paper Title:
Low Frequency Noise in n-GaN with High Electron Mobility
| Periodical |
Materials Science Forum (Volumes 338 - 342)
|
| Main Theme |
Silicon Carbide and Related Materials - 1999
|
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1603-1608 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1603 |
| Citation |
Sergey L. Rumyantsev et al., 2000, Materials Science Forum, 338-342, 1603 |
| Authors |
Sergey L. Rumyantsev, David C. Look, Michael E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, J. Molnar, Michael S. Shur |
| Keywords |
1/f Noise, Band-to-Band, Low-Frequency Noise, Sapphire Substrate |
| Price |
US$ 28,- |