Paper Title:
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
161-164
DOI
10.4028/www.scientific.net/MSF.338-342.161
Citation
L.B. Rowland, G. Dunne, J. A. Freitas, "Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy", Materials Science Forum, Vols. 338-342, pp. 161-164, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.