Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
161-164 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.161 |
| Citation |
L.B. Rowland et al., 2000, Materials Science Forum, 338-342, 161 |
| Authors |
L.B. Rowland, Jaime A. Freitas Jr., Greg Dunne |
| Keywords |
Epitaxy, Tantalum Carbide |
| Full Paper |
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