Paper Title:
Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1615-1618
DOI
10.4028/www.scientific.net/MSF.338-342.1615
Citation
A. Suvkhanov, N. Parikh, I.O. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. F. Davis, L.Y. Krasnobaev, "Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN", Materials Science Forum, Vols. 338-342, pp. 1615-1618, 2000
Online since
May 2000
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Price
$32.00
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