Paper Title:
Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing
  Abstract

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1619-1619
DOI
10.4028/www.scientific.net/MSF.338-342.1619
Citation
L.S. Tan, A. Raman, K.M. Ng, S.J. Chua, A.T.S. Wee, S.L. Lim, "Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing", Materials Science Forum, Vols. 338-342, pp. 1619-1619, 2000
Online since
May 2000
Export
Price
$32.00

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