Paper Title:
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1639-1642
DOI
10.4028/www.scientific.net/MSF.338-342.1639
Citation
W. S. Lee, K. W. Chung, M. W. Shin, "DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process", Materials Science Forum, Vols. 338-342, pp. 1639-1642, 2000
Online since
May 2000
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Price
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