Paper Title:
Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1643-1646
DOI
10.4028/www.scientific.net/MSF.338-342.1643
Citation
S.T. Sheppard, K. Doverspike, M. Leonard, W.L. Pribble, S.T. Allen, J. W. Palmour, "Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 1643-1646, 2000
Online since
May 2000
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