Paper Title:
Characterization of AlGaN/GaN HEMT Devices Grown by MBE
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1647-1650
DOI
10.4028/www.scientific.net/MSF.338-342.1647
Citation
T.W. MacElwee, J.A. Bardwell, H. Tang, J.B. Webb, "Characterization of AlGaN/GaN HEMT Devices Grown by MBE", Materials Science Forum, Vols. 338-342, pp. 1647-1650, 2000
Online since
May 2000
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Price
$32.00
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