Characterization of AlGaN/GaN HEMT Devices Grown by MBE |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1647-1650 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1647 |
| Citation |
T.W. MacElwee et al., 2000, Materials Science Forum, 338-342, 1647 |
| Authors |
T.W. MacElwee, J.A. Bardwell, H. Tang, J.B. Webb |
| Keywords |
Dislocation, Heterojunction, MBE, Micro-Wave, TEM |
| Full Paper |
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